Abstract
The conduction characteristics of MOS capacitors with thin gate oxide irradiated with high-energy protons have been studied. An excess current appears at low electric fields that can be explained with a trap-assisted tunnel model with a single trap level. By using devices with different areas it has been confirmed that this leakage current is uniformly distributed over the oxide area. In addition, a series resistance effect is revealed at high current levels, which increases with proton fluence. It is also shown that the damage induced by irradiation in the SiO 2/Si interface is negligible.
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