Abstract
The stripping behavior of high-dose ion-implanted (HDIM) photoresist was investigated in a scCO2 microemulsion with 3wt.% surfactant of 2-ethyl hexanol polyoxyethylene-polyoxypropylene and 2vol.% co-solvent of dimethylsulfoxide. The removal efficiency was studied under the pressure of 10-25MPa at 40-60^oC. The results of surface characterization and composition analysis for the cleaned samples by SEM, FTIR, and XPS revealed that the removal rate increased with time with a sharp increase during the first 10min. Temperature and pressure are favorable to the stripping within 20min. The photoresist removal efficiency at 50^oC improved from 40% to 85% as the pressure range of 10-25MPa due to the higher scCO2 density at higher pressure which enhances the photoresist solubility in scCO2. The magnetic agitation and pressure pulsation generated a higher fluid velocity to provide a larger physical force. This new environment-friendly photoresist stripping method allows dramatic reduction in water and chemicals consumption and overcomes the obstacle in the conventional microelectronics processing due to the shrinkage in the feature size.
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