Abstract
High-voltage fast silicon p+Nn+ diodes used in almost all modern electrical energy converters must have a low residual voltage in the conducting state, but can simultaneously be rapidly switched to the off state with low commutation losses without producing a surge overvoltage. Such a combination of parameters is usually ensured by producing the profile concentration distribution for recombination centers in the N base with a peak of the p+N junctions. Such a distribution is produced by irradiating the p+Nn+ diode in vacuum by protons or α particles on the side of the p+N junctions. We report on the results of testing of diodes in which profile distribution for the centers is obtained using a simpler and more productive method by electron bombardment in a certain energy range in air. It is shown using the specially designed devices with a blocked voltage up to 5 kV that all dynamic characteristics of the diodes correspond to the world standard, and the residual voltage in the conducting state for the working current density is approximately 30% lower.
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