Abstract
Consistent preservation of 〈01̄1̄〉-oriented grating corrugations with 2850-Å period and 1500-Å height on (100) InP substrates has been achieved during thermal cycling at 660 °C for 60 min in a H2 ambient, using roughened GaAs cover slices. It is found that transport of Ga and As causes the formation of a graded 25-Å-thick InGaAsP alloy on the surface of the gratings, as detected by Auger and x-ray photoelectron spectroscopic analysis. This preservation technique eliminates the need for lower-temperature crystal growth of distributed feedback laser wafers by liquid-phase epitaxy (LPE). Successful growth of distributed feedback laser wafers using conventional high-temperature LPE is demonstrated.
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