High temperature operation of n-AlGaN channel metal semiconductor field effect transistors on low-defect AlN templates

Abstract

We report room-temperature to 200 °C operation of n-Al0.65Ga0.35N channel metal semiconductor field effect transistors (MESFET) grown over high-quality AlN/sapphire templates. For this temperature range, the source-drain currents, threshold voltages, and dc-transconductance values remain nearly unchanged with an estimated field-effect mobility of ∼90 cm2/V-s at 200 °C and currents of >100 mA/mm. The analysis of the temperature dependent current-voltage characteristics of the gate-source Schottky barrier diode reveals that the leakage currents arise from Frenkel-Poole emission. The capacitance-voltage data show no hysteresis, indicating a high quality Schottky barrier interface. These MESFET's have excellent potential for use as a high temperature power electronic or a solar-blind ultraviolet sensing device.