Abstract
4H-SiC bipolar Darlington transistors (D-BJTs) for low voltage applications have been fabricated, simulated and characterized up to 300 °C, where they exhibit a current gain of 460. The influence on D-BJT current gain of relative current capability of driver and output BJTs has been investigated, and the collector resistance has been identified as the main limitation for the D-BJTs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
