Abstract
GaInNAs/GaAs single-quantum-well (SQW) lasers have been grown bysolid-source molecular beam epitaxy. N is introduced by a home-madedc-active plasma source. Incorporation of N into InGaAs decreases thebandgap significantly. The highest N concentration of 2.6% in a GaInNAs/GaAsQW is obtained, corresponding to the photoluminescence (PL) peakwavelength of 1.57 µm at 10 K. The PL peak intensity decreases rapidlyand the PL full width at half maximum increases with the increasing Nconcentrations. Rapid thermal annealing at 850°C couldsignificantly improve the crystal quality of the QWs. An optimumannealing time of 5s at 850°C was obtained. TheGaInNAs/GaAs SQW laser emitting at 1.2 µm exhibits a highcharacteristic temperature of 115 K in the temperature range of20°C-75°C.
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