Abstract
Diamond is a promising material for future high power devices due to high breakdown field, low dielectric constant and high carrier mobility, respectively. From one-dimensional device model, 90% reduction of the power loss is expected by using diamond Schottky barrier diode instead of SiC diode for high temperature power device applications. The high breakdown field of more than 3MV/cm has been realized by utilizing high Schottky barrier height. The diodes show low leakage current and low on-resistance even at high temperature conditions.
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