Abstract
The electrical properties and spectrum of deep traps in GaAs under heat treatment, neutron irradiation, and subsequent annealing to T ann=1100 °C have been investigated. It is shown that for T ann>900 °C thermal acceptors are formed rapidly in GaAs, which degrades the properties of the transmutation-doped material. Estimates are given for the utilization factor of the impurity with transmutation doping of GaAs as a function of T ann and the integrated neutron flux. The parameters of deep traps in the experimental material are presented.
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