Abstract
Several high-temperature superconductor (HTS)/III-V solid-state hybrid microwave circuits were designed, fabricated, and tested. The I-V curves, S-parameters, and noise behavior for several solid-state devices at cryogenic temperatures were measured. Several high-electron-mobility transistor (HEMT) and heterojunction bipolar transistor (HBT) C-band low-noise amplifiers were fabricated and tested at cryogenic temperatures with an additional gain of 3 dB when compared to their room-temperature gain. These amplifiers were also used in low-phase-noise oscillators stabilized by a HTS lambda /2 microstrip line resonator with a loaded Q-value of 3*10/sup 3/ or a sapphire-HTS resonator with a loaded Q-value of 1.2*10/sup 6/, both measured at 80 K. Preliminary measurement at 70 K indicates that the phase noise of an oscillator stabilized with a sapphire-HTS resonator was below -125 dBc/Hz at 10-kHz offset and limited by the test setup. >
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