Abstract
Several long-wavelength monolithically integrated photoreceivers have recently been developed [1-8] for high-speed optical transmission systems and optical interconnection systems, because of a small amount of parasitic capacitance and inductance, small receiver size and packaging simplicity. These receiver OEICs combined photodetectors, such as surface-illuminated pin-photodiodes and MSM photodiodes, and high speed transistors, such as heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs).
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