Abstract
A novel side-illuminated receiver OEIC, consisting of a waveguide p-i-n photodiode and an InAlAs-InGaAs-HEMT transimpedance amplifier, was fabricated by a dry-etching based process. The OEIC has a 3-dB bandwidth of 8.3 GHz and a transimpedance of 100 /spl Omega/, which enables it to receive a 10-Gb/s NRZ signal. These results represent a major advance in achieving ultrahigh-speed side-illuminated OEICs for long-wavelength optical interconnection and transmission systems.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
