Abstract
A high speed LIGBT with localized lifetime control by using high dose and low energy helium implantation (LC-IGBT) is proposed. Compared with AS-LIGBTs and the conventional LIGBTs, the partial irradiation results show that trade-off relationship between turn-off time and forward voltage drop has been improved. It is the advanced lifetime control method stable for huge thermal budget and applicable in any steps of device fabrication, so that it improves lifetime engineering possibilities in power integrated circuit with respected to conventional lifetime control methods.
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