High-Speed InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

Abstract

We present and discuss the performance characteristics of InP-based p-i-n photodiodes (PDs) with InGaAs/GaAsSb type-II multiple quantum wells absorption regions designed to absorb light at mid-infrared wavelengths. Top-illuminated and waveguide-integrated PDs are fabricated with dark currents as low as 100 nA at −2 V, an external responsivity as high as 0.27 A/W at 2 $\mu \text{m}$ and 0.3 A/W at 1.55 $\mu \text{m}$ , and a 3-dB bandwidth of 3.5 GHz at 2 $\mu \text{m}$ .