Abstract
Abstract Spatial resolution of two types of graded-gap Al x Ga 1− x As X-ray detectors, p + -Al x Ga 1− x As layer (A type) and p-Al x Ga 1− x As −p + -GaAs–p-Al x Ga 1− x As structure (B-type), is investigated. Two processes, the diffusion of generated charge and broadening of light beam, cause blurring of X-ray image in the detectors. Optical broadening of light beam was eliminated in B-type structure. The value of spatial resolution mainly depends on the thickness of graded-gap Al x Ga 1− x As layer. Spatial resolution of 10 LP/mm for the A-type structure of 50 μm thickness and 25 LP/mm for B-type structure of 18 μm thickness was experimentally observed.
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