Abstract
This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations. The analysis and comparison of conventional 4H-SiC JBS and 4H-SiC Multi-Buffer Layer JBS (MBL-JBS) diodes verify the resistance tolerance of the latter device to SEB. Silvaco TCAD simulation results prove that the 4H-SiC MBL-JBS modulates the drift region's electric field distribution and disperses the high-peak electric field at the N-/N+ junction. Moreover, it reduces the impact generation rate at the Schottky, PN and N-/N+ junctions to achieve SEB tolerance. The device's SEB performance is optimized by adjusting the 4H-SiC MBL-JBS structure parameters, and the SEB threshold voltage is significantly improved compared with the traditional structure.
Highlights
Silicon carbide (SiC) is a new generation of semiconductor material that has excellent material characteristics, which include wide bandgap, high thermal conductivity, and high critical electric field [1]–[5]
Local and international researchers have shown that the SiC materials’ single-event performance is defective and they are susceptible to single-event burnout (SEB) [10]–[14]
The simulation results show that the 4H-SiC multiple buffer layer (MBL)-Junction Barrier Schottky (JBS) has a high tolerance to SEB, and the burnout threshold is significantly higher than that of a conventional 4H-SiC JBS device
Summary
Silicon carbide (SiC) is a new generation of semiconductor material that has excellent material characteristics, which include wide bandgap, high thermal conductivity, and high critical electric field [1]–[5]. The simulation results show that the 4H-SiC MBL-JBS has a high tolerance to SEB, and the burnout threshold is significantly higher than that of a conventional 4H-SiC JBS device.
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