Abstract
High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer
Published Version
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https://doi.org/10.1109/led.2025.3526503
Journal: IEEE Electron Device Letters | Publication Date: Mar 1, 2025 |
High RF Performance E-Mode GaN-on-Si HEMTs With Pₒᵤₜ of 5.32 W/mm Using High-Quality Ultrathin Buffer
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