Abstract
In this paper, a two-dimensional (2D) planar scanning capacitance microscopy (SCM) method is used to visualize with a high spatial resolution the channel region of large-area 4H-SiC power MOSFETs and estimate the homogeneity of the channel length over the whole device perimeter. The method enabled visualizing the fluctuations of the channel geometry occurring under different processing conditions. Moreover, the impact of the ion implantation parameters on the channel could be elucidated.
Highlights
Silicon-carbide (4H-SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are raising the interest of the scientific community, owing to their applications and excellent performances in power electronics [1]
In the fabrication of vertical 4H-SiC MOSFETs, ion implantation is used to introduce dopant species in selective regions of the material, followed by high-temperature annealing for the electrical activation [2,3]
To accurately predict the device performance, both the active doping concentration and the geometry of the implanted MOSFET regions must be monitored at the nanoscale
Summary
Silicon-carbide (4H-SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are raising the interest of the scientific community, owing to their applications and excellent performances in power electronics [1]. To accurately predict the device performance, both the active doping concentration and the geometry (e.g., size of the implanted region, junction depths, etc.) of the implanted MOSFET regions must be monitored at the nanoscale. While the diffusion coefficients in SiC are extremely low, the two-dimensional lateral spread of implanted atoms can affect the dopant distribution and, the device behavior [4]. To accurately predict the MOSFET performance, both the active doping concentration and the geometry of the implanted regions (e.g., size, junction depths, etc.). While the implantation doping in SiC is precisely localized after post-implantation annealing due to the extremely low diffusivity of the dopant species, the two-dimensional lateral spread of implanted atoms [4] and channeling effect in the hexagonal 4H-SiC lattice [5] can affect the dopant distribution
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