Abstract
The preparation of cross-sectional samples of a number of epitaxially grown, binary and ternary materials within the system ZnSe 1 − y S y (0 ⪕ y ⪕ 1) on a variety of single crystalline substrates is reported. A combination of chemical polishing and fast atom bombardment (FAB) provides samples down to ca. ⪕ 100 Å thickness and these are suitable for study by high resolution (lattice imaging) transmission electron microscopy (HRTEM). The integrity of the structure and composition of epitaxial layers appears to be maintained during thinning and our techniques allow the selection and subsequent thinning of particular regions of interfaces. The lattice images obtained at 100 and 120 keV reveal structural details of the interfaces and defects in the bulk of the epiaxial layers.
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