Abstract
High repetition and high power laser development is one of the important subjects for the realization of a practical EUV light source for microlithography using 13.5 nm. This paper presents advances in Nd: YAG laser and CO2 laser development for EUV source application at Osaka University and EUVA, respectively. An average laser power of 5.2k W at 100k Hz repetition rate with 10 ns pulse width was achieved from a Nd: YAG laser system developed at Osaka University, while an average laser power of 13k W at 100k Hz repetition rate with 20 ns pulse width was achieved from a short pulse CO2 MOPA (Master Oscillator Power Amplifier) system developed at EUVA.
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