High reflectivity phase conjugation in magnetized diffusion driven semiconductors

Abstract

Optical phase conjugation via stimulated Brillouin scattering (OPC-SBS) in magnetized diffusion driven semiconductors under the off-resonant transition regime has been investigated theoretically. The model is based upon the coupled-mode approach and incorporates the effect of pump absorption through the first-order induced polarization. The linear dispersion is found not to affect the reflectivity of the phase conjugate Stokes shifted Brillouin mode. The reflectivity of the image radiation is dependent upon the Brillouin susceptibility and can be significantly enhanced through n-type doping of the crystal and the simultaneous application of magnetic field. Moreover, the threshold of the pump intensity required for the occurrence of SBS in the crystal with finite optical attenuation can be considerably diminished through a suitable choice of the excess carrier concentration and the magnetic field. Consequently, OPC-SBS becomes a possible tool in phase-conjugate optics even under not-too-high power laser excitation by using moderately doped n-type semiconductors kept under the influence of magnetic field. Numerical estimates made for n-InSb crystal at 77 K duly irradiated by nanosecond pulsed 10.6 μm CO2 laser show that high OPC-SBS reflectivity (70%) can be achieved at pump intensities below the optical damage threshold if the crystal is used as an optical waveguide with relatively large interaction length (L ∼5 mm) which proves its potential in practical applications such as fabrication of phase conjugate mirrors.