Abstract
AbstractA new high‐speed sputtering method using a hollow target is proposed. Its model analysis and experimental examination are carried out. As a result, it has been shown that a high‐speed film synthesis without damages from high‐energy particles is possible. This is not only because the plasma discharge is confined inside the target resulting in high density, but also because the particles sputtered from the target inner wall lose considerable energy due to collisions. In the actual experiments, by argon sputtering a small hollow cylindrical Nb target with inner wall area of 33 cm2, a high deposition rate of more than 200 nm/min has been obtained despite a very simple electrode configuration. Furthermore, as a result of applying this method to the NbCxN1‐x film formation by reactive sputtering with nitrogen, it has been verified that a high‐speed film synthesis with more than 60 nm/min is possible. In addition, a high‐quality film with superconducting critical temperature of 17.7 K in the composition range of x = 0.1–0.3 can be obtained. Moreover, this film shows a peculiar preferential growth in the (200) plane on a high‐temperature substrate.
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