Abstract
The discovery of ferroelectricity and advances in creating polar structures in atomic-layered hafnia-zirconia (HfxZr1-xO2) films spur the exploration of using the material for novel integrated nanoelectromechanical systems (NEMS). Despite its popularity, the approach to achieving high quality factors (Qs) in resonant NEMS made of HfxZr1-xO2 thin films remains unexplored. In this work, we investigate the realization of high Qs in Hf0.5Zr0.5O2 nanoelectromechanical resonators by stress engineering via the incorporation of alumina (Al2O3) interlayers. We fabricate nanoelectromechanical resonators out of the Hf0.5Zr0.5O2-Al2O3 superlattices, from which we measure Qs up to 171,000 and frequency-quality factor products (f × Q) of >1011 Hz through electrical excitation and optical detection schemes at room temperature in vacuum. The analysis suggests that clamping loss and surface loss are the limiting dissipation sources and f × Q > 1012 Hz is achievable through further engineering of anchor structure and built-in stress.
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