Abstract
The optical quality of AlGaAs/GaAs single quantum wells prepared by MBE has been remarkably improved by the introduction of an (InGaAs)(GaAs) strained superlattice buffer (SSLB) layer and an AlGaAs/GaAs superlattice buffer (SLB) layer. The PL measurement shows more than 5 times higher peak intensity compared with that of the SLB alone. A GRIN-SCH single quantum well 770 nm laser with both SSLB and SLB was also examined. A high internal quantum efficiency of 95% with a small cavity loss of α = 3cm -1 and a high differential quantum efficiency of 50% even for a 3200 μm long cavity have been achieved.
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