Abstract
AbstractIn this report, we show how one‐dimensional ladder‐structure photonic crystal cavity design can be used to reduce extrinsic losses in AlN photonic crystal nanocavities. The design is implemented in an AlN epilayer containing GaN QDs by a layer transfer method. Microphotoluminescence characterization of nanocavities reveals resolution‐limited quality factors as high 6900, the highest reported to date in group‐III nitride photonic crystal nanocavities. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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