Abstract
The growth of ultra-pure GaAs by the liquid phase epitaxy technique is reported. This material has exhibited net carrier concentrations as low as 1012 cm-3 and peak Hall mobilities up to 250 000 cm2/V sec at 51°K. High drift mobilities of 350 000 cm2/V sec have been observed at 4°K under high electric field conditions. Über das Wachstum von ultra-reinem GaAs, das durch Flüssig-Phase-Epitaxie gewonnen wurde, wird berichtet. Ladungsträger-Konzentrationen vou nur 1012 cm-3 und maximale Hall beweglich keiten bis zu 250 000 cm2/V sec wurden beieiner Temberatur von 51°K erhalten. Beihohen Feldstärken und einer Temperatur vou 4°K wurden hohe Driftgeschwindigheiten von 350 000 cm2V sec beobachtet.
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