Abstract
The ferromagnetic semiconductor Cd0.7Mn0.3GeAs2 undergoes a high-pressure ferromagnetic-to-antiferromagnetic phase transition. We have studied this transition at different temperatures. From magnetic-field dependences of the Hall resistance measured at different temperatures, we have derived the normal and anomalous Hall coefficients of the material as functions of temperature. Its transverse magnetoresistance changes from positive to negative near the ferromagnetic-to-antiferromagnetic phase transition.
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