Abstract
The bandwidth of an optically pumped semiconductor laser (OPS) is determined by the bandwidth of the material gain, the bandwidth of the longitudinal confinement factor (LCF), and the bandwidth of the Distributed Bragg Reflector (DBR). For a typical OPS structure at 1064nm, the bandwidth of the DBR is the largest among them. In this work, we demonstrate a tunable OPS structure with broadened material gain and LCF, so that the bandwidth of the OPS is close to the bandwidth of the DBR. The laser outputs more than 2W, tunable in a wavelength range of 1035 – 1100nm.
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