Abstract
Narrow ridge stripe lasers with metamorphic InAs/InGaAs quantum dots grown using molecular beam epitaxy on GaAs substrates emit in the 1.5 µm wavelength range demonstrating a differential quantum efficiency of about 50%, singlemode operation, and maximum continuous-wave power of 220 mW limited by thermal roll-over. Absence of beam filamentation is demonstrated up to the highest power levels studied.
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