Abstract
We designed and fabricated new structure lasers, the high-power AlGaAs/GaAs remote junction (RJ) single quantum well (SQW) semiconductor lasers whose p–n junction was separated from the active layer. The RJ lasers showed marked reduction of threshold current during early aging period. This reduction was accompanied by a decrease of non-radiative recombination centers in the active layer. For the RJ SQW lasers, the relation between the low-frequency electrical noise and the lifetime of devices is different from the conventional SQW lasers.
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