Abstract
The characteristics and limitations of high power microwave transistors are discussed. The importance of the major parameters such as collector epilayer thickness and resistivity, base width, base-spreading resistance, contact resistances, collector-base feedback capacitance and emitter area, in determining current gain-bandwidth product (ft) and maximum frequency of oscillation (fmax) are pointed out and the design criteria are given. Fundamental limits of microwave power and gain set by semi-conductor material properties are presented.For a stripe geometry consisting of alternating fingers of base and emitter regions, design criteria leading to the selection of optimum finger dimensions are presented. A circular stripe geometry based on these design criteria is used to fabricate high power microwave transistors. Experimental results showing ft > 4 GHz and fmax > 2.5 GHz for a collector-current range of 20 to 200 mA and a collector-emitter voltage range of 2 to 15 volts are presented. The significance of...
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