Abstract
A silicon carbide MESFET technology has been established. Single finger and multifinger power devices have been fabricated. Ft and Fmax of 6 and 18 GHz respectively were obtained from single finger devices. Current instabilities have been observed under CW operation, although microwave power densities of 2.5 W/mm have been achieved under pulsed operation at 2-4 GHz. A maximum power of 6.8 W has been achieved from a single device, and over 16 W from a single chip with three devices bonded together, these devices were measured pulsed at 4 GHz.
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