Abstract
High power density Al0.3Ga0.7As/In0.15Ga0.85As doped-channel FETs (modified DCFETs) biased at 3 V for 2.4 GHz wireless communication applications are proposed. A planar Si δ-doped layer is inserted inside the wide-bandgap undoped AlGaAs layer to reduce parasitic resistances and enhance the device microwave power performance. The modified DCFETs (M-DCFETs) exhibit an output power density of 302 mW/mm, a power-added efficiency of 52%, and a linear power gain of 19 dB under 2.4 GHz operation for a 1 mm gate-width device. These characteristics suggest that doped-channel FETs with a planar Si δ-doped layer can be used in high linearity and high power microwave device applications.
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