Abstract
We have developed the effective design of semiconductor heterostructures, which allow one to fabricate cw laser diodes emitting in the spectral range. The optimal conditions for fabrication of GaAsP/AlGaInP/GaAs heterostructures by MOCVD have been determined. It is shown that the use of quantum wells with a precisely defined quantity mismatch reduces the threshold current density and increases the external differential efficiency. The results of studies of characteristics of diode laser bars fabricated from these heterostructures are presented.
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