Abstract
The hole lifetime τp in the n-base and isothermal (pulse) current–voltage characteristics have been measured in 4H–SiC diodes with a 10kV blocking voltage (100μm base width). The τp value found from open circuit voltage decay (OCVD) measurements is 3.7μs at room temperature. To the best of the authors’ knowledge, the above value of τp is the highest reported for 4H–SiC. The forward voltage drops VF are 3.44V at current density j=100A/cm2 and 5.45V at j=1000A/cm2. A very deep modulation of the blocking base by injected non-equilibrium carriers has been demonstrated. Calculations in term of a simple semi-analytical model describe well the experimental results obtained.
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