High performance ultraviolet A/ultraviolet C detector based on amorphous Ga2O3/ZnO Nanoarrays/GaN structure

Abstract

High-performance ultraviolet (UV) photodetector was fabricated based on amorphous Ga 2 O 3 /ZnO nanoarrays(NRs) on p-GaN film. The obtained detector displays excellent UV sensing properties which covers UV-A/UV-C region with fast response without external bias. The high photosensitivity can be ascribed to the geometry of the match-like Ga 2 O 3 /ZnO NRs and emergence of the built-in field between the amorphous Ga 2 O 3 and ZnO interface. The results will provide a new method to improve the ZnO/GaN heterostructure for applications in broadband ultraviolet sensing. High-performance ultraviolet (UV) photodetector was fabricated based on amorphous Ga 2 O 3 /ZnO nanoarrays(NRs) on p-GaN film. The obtained detector displays excellent UV sensing properties which covers UV-A/UV-C region with fast response without external bias. The high photosensitivity can be ascribed to the geometry of the match-like Ga 2 O 3 /ZnO NRs and emergence of the built-in field between the amorphous Ga 2 O 3 and ZnO interface. The results will provide a new method to improve the ZnO/GaN heterostructure for applications in broadband ultraviolet sensing. • Amorphous Ga2O3/ZnO NRs/GaN photodetector were fabricated by combining aqueous method and sputtering method. • The ZnO/GaN response performance is improved by depositing amorphous Ga2O3 layer. • The device has an excellent response in the ultraviolet A and ultraviolet C regions without external bias.