Abstract
A simple oxygen (O2) plasma-treatment process was utilized to achieve high performance aluminum oxide (Al2O3) dielectrics for thin film transistors (TFTs) through modulating the surface wettability of various substrates. Multilayer dielectric films with excellent electrical properties were obtained by spin coating of additive-free Al2O3 precursors. The resulting Al2O3 films were dense, smooth, uniform and kept in an amorphous structure. The TFT with high-performance spin-coated Al2O3 dielectric (three layers) exhibited a saturation mobility of 16.8 cm2 V−1 s−1, a threshold voltage (Vth) of 2.5 V, and a subthreshold swing (SS) of 0.172 V/dec. Particularly, compared with TFTs with thinner dielectric, it displayed a higher on/off current ratio (~107) and better stability of off-state current under the negative bias stress (NBS). Furthermore, the electrical performance of TFTs was independent of the dielectric thickness (four and five layers). High performance Al2O3 dielectric were obtained by the precursor free of additives and with fewer spin-coating times compared with previous works.
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