Abstract
In this study, the slicing of silicon ingot by wire EDM is discussed, and the machining properties are experimentally investigated. Also, the accuracy of sliced wafer and the contamination on the machined surface are evaluated. Experimental results made it clear that the accuracy of wafer by this slicing method is almost the same as that by the conventional methods, and even higher slicing speeds are possible when multi type wire EDM slicing can be realized. Additionally, the contamination due to the adhesion and diffusion of wire electrode material into the sliced surface can be reduced by wire EDM under the condition of low current and long discharge duration. Therefore, wire EDM has a high potential as a new slicing method for monocrystalline silicon ingot.KeywordsSlicingMonocrystalline silicon ingotWire EDM
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