Abstract
A novel SiGe/Si δ-doped-channel field effect transistors (DDCFETs) grown on silicon-on-insulator (SOI) have been successfully fabricated and demonstrated for the first time. No serious boron outdiffusion is found according to the SIMS analysis. The proposed device with a 1×100 μm 2 gate reveals the gate voltage swing (GVS) as wide as 2.6 V. In addition, the reverse breakdown voltage between the Schottky gate and the δ-layer reaches 34 V, which is much larger than that of the same device structure grown on bulk Si. The high GVS and breakdown voltage are attributed to good carrier confinement not only by the V-shaped potential well formed by the heavily δ-doping but also SOI-induced effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
