Abstract
Low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors (TFTs) have been developed and characterized. These TFTs are better than their solid-phase crystallized counterparts in many process and device performance measures, such as shorter and simpler process flow, higher field-effect mobility, reduced leakage current, better immunity to early drain breakdown and much improved spatial uniformity of device parameters. They have been used to realize active matrices for liquid–crystal (LC) and organic light-emitting diode (OLED) flat-panel displays.
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