Abstract
This letter reports on the design and fabrication of HgCdTe electron-avalanche photodiode (e-APD) for low dark current and high gain for imaging applications. HgCdTe e-APD photodiodes were fabricated in the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -ν-p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> configuration for FPA at 30 μm × 30 μm pitch. Process for creating the required carrier profile and compositional grading in the absorption and multiplication regions was developed. Graded bandgap profile in the absorption region has been introduced. Shallow mesa etch isolation and effective passivation of side walls were introduced to control lateral currents. High quantum efficiency of 65% makes these APDs suitable for applications like quantum encryption. These measures helped in achieving high avalanche gain of 5550 at 8 V reverse bias in HgCdTe MWIR e-APD for the first time.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
