Abstract
Molecular field-effect transistors with bulk-like carrier mobility (as high as 0.04 cm2 V−1 s−1), high on/off current ratios (over 106), and high responsivity are formed by the integration of Langmuir–Blodgett techniques with sophisticated micro/nanofabrication. The transistors are formed from self-assembled uniform monolayers of copper phthalocyanine (CuPc) semiconductors and single-layer graphene as planar contacts.
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