Abstract
Schottky diode, capable of ultrahigh frequency operation, plays a critical role in modern communication systems. To develop cost-effective and widely applicable high-speed diodes, researchers have delved into thin-film semiconductors. However, a performance gap persists between thin-film diodes and conventional bulk semiconductor-based ones. Featuring high mobility and low permittivity, indium-tin-oxide has emerged to bridge this gap. Nevertheless, due to its high carrier concentration, indium-tin-oxide has predominantly been utilized as electrode rather than semiconductor. In this study, a remarkable quantum confinement induced dedoping phenomenon was discovered during the aggressive indium-tin-oxide thickness downscaling. By leveraging such a feature to change indium-tin-oxide from metal-like into semiconductor-like, in conjunction with a novel heterogeneous lateral design facilitated by an innovative digital etch, we demonstrated an indium-tin-oxide Schottky diode with a cutoff frequency reaching terahertz band. By pushing the boundaries of thin-film Schottky diodes, our research offers a potential enabler for future fifth-generation/sixth-generation networks, empowering diverse applications.
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