Abstract
We could obtain high performance gate-first pMISFET with TiN/HfSiON gate stacks fabricated with PVD-based in-situ method. High-quality Hf silicate gate dielectrics were formed by utilizing a solid phase interface reaction (SPIR) between a metal Hf layer and an SiO2 underlayer, and TiN electrodes were continuously grown on the gate dielectrics using a low-damage sputtering system without exposure to air.
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