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Abstract
A T-gate structure has been implemented in the fabrication of fully depleted silicon-on-insulator MOSFETs. The T-gate process is fully compatible with the standard CMOS and the resulting reduction of gate-resistance significantly improved the RF performance. Measured f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> is 76 GHz and 63 GHz for n- and p-MOSFET with 0.2-μm gate length, respectively. At 2 GHz, a minimum noise figure of 0.4 dB was measured on an n-MOSFET with the T-gate structure.
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