Abstract
This paper presents a dark current suppression technique for a light detector in a variable-temperature system. The light detector architecture comprises a photodiode for sensing the ambient light, a dark current diode for conducting dark current suppression, and a current subtractor that is embedded in the current amplifier with enhanced dark current cancellation. The measured dark current of the proposed light detector is lower than that of the epichlorohydrin photoresistor or cadmium sulphide photoresistor. This is advantageous in variable-temperature systems, especially for those with many infrared light-emitting diodes. Experimental results indicate that the maximum dark current of the proposed current amplifier is approximately 135 nA at 125 °C, a near zero dark current is achieved at temperatures lower than 50 °C, and dark current and temperature exhibit an exponential relation at temperatures higher than 50 °C. The dark current of the proposed light detector is lower than 9.23 nA and the linearity is approximately 1.15 μA/lux at an external resistance RSS = 10 kΩ and environmental temperatures from 25 °C to 85 °C.
Highlights
With the ever-increasing demand for eco-design, environmental legislation for electronics is focused on two major requirements
Three types of with enhanced dark current cancellation is indicated by current amplifier (CA) were compared
The proposed CA with enhanced dark current cancellation is indicated by CAFigure were 10a
Summary
With the ever-increasing demand for eco-design, environmental legislation for electronics is focused on two major requirements. The proposed chip includes a light-sensitive array, analog-to-digital converters, dark current cancellation circuitry, and facilities for testing and calibration. It operates as a near-infrared camera [3]. A prototype integrated phototransistor-based CMOS current measurement completed by subtracting dark signal frame imaging. In reference [6], an ultralow dark signal was presented for an embedded active-pixel CMOS image. The dark current was cancelled using a sensing device that was embedded active-pixel CMOS image sensor. To achieve in-pixel dark current cancellation, a fabricated withphotogate a large area. (LFC) chip is proposed with dark current high dynamic light-to-frequency. A high dynamic range light-to-frequency converter (LFC) chip is proposed with dark current.
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