Abstract
Substantially reduced threshold current density and improved efficiency in long-wavelength (>1.4 µm) GaAs-based lasers are reported. A 20×1220 µm as-cleaved device showed a room temperature continuous-wave threshold current density of 580 A/cm2, external efficiency of 53%, and 200 mW peak output power at 1.5 µm. The pulsed threshold current density was 450 A/cm2 with 1145 mW peak output power.
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