Abstract
We demonstrate high operating voltage transparent thin-film transistors (HVTTFTs) using amorphous InGaZnO (a-IGZO) active layers by introducing a high resistance bulk region in the source/drain electrodes. The HVTTFTs are operated at above VDS = 100 V with a high on/off current ratio and a good subthreshold slope. The electrical characteristics of the HVTTFTs were dominantly affected by Schottky contact resistance for small off-set length, and bulk resistance for large off-set length, indicating that optimization of the off-set length is a key factor to realize high performance HVTTFTs.
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