Abstract
High-mobility two-dimensional electron gases in Si/Si 1- x Ge x single heterostructures are studied by Shubnikov-De Haas (SdH), Hall, and cyclotron resonance (CR) measurements. These samples were grown by MBE on relaxed SiGe buffer layers with linearly increasing Ge contents and therefore only the Si layers experience tensile strain. This modern buffer concept leads to an enormous increase of the electron mobilities compared to samples grown on conventional single step buffers. By evaluating the SdH data at low magnetic fields it is shown that long-range scattering is the dominant scattering mechanism in these samples. CR spectra yield narrow line widths and strong absorption. The mobility derived from the CR scattering rate is somewhat lower than the magnetotransport result.
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