Abstract
This letter demonstrates a high-mobility amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) with aluminum oxide (Al2O3) passivation layer by radio frequency (RF) magnetron sputtering and copper (Cu) source/drain electrodes. The fabricated a-IGZO TFT exhibited 20 times higher saturation mobility (142.0 cm2/Vs) than the reference device without Al2O3 passivation layer. The generation of metallic indium at the back-channel interface caused by the bombardment of the sputtered Al2O3 is the main principle for the remarkable enhancement of saturation mobility. Furthermore, the a-IGZO TFT maintains high mobility and air-ambient-stable characteristics up to four months in ambient conditions.
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